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  1. We study electron tunneling in binary quantum systems as double quantum dot (DQD) and double quantum well (DQW), considered as two-level systems. The Schrodinger equation for this system is reduced using single band kp-effective Hamiltonian, and is solved numerically. We calculate full electron spectrum E, n = 1,2 ... in the bi-confinement potential. The tunneling in DQD is studied in relation to two factors, a coupling coefficient W and an asymmetry factor A of the potential. The ratio W/A defines the electron localization in DQD. The cases of ideal and almost ideal DQD are examined and compared. We are modeling the effects of environmental influence and fluctuations of electrical pulse on the coherence of DQD based charge qubit. In particular, we show that the coupling in the ideal DQD (A=0) is unstable for any small fluctuations of A. 
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  2. Abstract We study single electron tunnelling from the barrier in the binary InAs/GaAs quantum structure including quantum well (QW) and quantum dot (QD). The tunneling is described in the terms of localized/delocalized states and their spectral distribution. The modeling is performed by using the phenomenological efective potential approach for InAs/GaAs heterostructures. The results for the two and three-dimensional models are presented. We focus on the efect of QD-QW geometry variations. The relation to the PL experiments is shown. 
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